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By Klaus Ploog (auth.), Gerhard Fasol, Annalisa Fasolino, Paolo Lugli (eds.)

ISBN-10: 1475765657

ISBN-13: 9781475765656

ISBN-10: 1475765673

ISBN-13: 9781475765670

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Figure 18 (a) shows the overall view of the short-gated MESFET fabricated from the ODDS. The inset shows the enlarged view of the gate electrode. We show the room-temperature character ist ics of the dev ice in Fig. 18 Cb). The observed transconductance is about 270 mS/mm. The intrinsic transconductance is 400mS/mm. On the other hand, the theoretical gm is given by72,74,75) 39 Fig. 18. Overall view of the DDDS MESFET. The inset scale is 500A/div. (b) Characteristics of the ODDS MESFET. The Gate voltage is in 200 mV step.

14. Temperature dependence of the energy gap of (AlAs) 2 We may suggest that the plateau indicates the band in the UTSL is not composed of pure r band nor pure X band. If the band was composed of pure r band, the energy gap would increase monotonously without any plateau. If the band is composed of pure X band, on the other hand, then we would not see strong photoluminescence. The strong photoluminescence observed even for small n and also the plateau at n N 10, thus, indicate that the lowest band of the UTSL is composed partly of r band and partly of X band components.

The first order Raman scattering process is described by a Feynman diagram having three vertices. namely. an incoming photon-exciton vertex, the exciton-LO phonon vertex, and the exciton-outgoing photon vertex. The cross sect ion of this scattering process. i. 38) (Eb - WW2 - it) (E a - WWl -it) 12 (5) where So is the cross-section calculated from the classical electron radius, N the number of unit cells, V the unit cell volume, and no the index of refraction. HeL and HeR the Hamiltonians of electron-phonon and electron-photon interactions, Ea and Eb the energies of intermediate states a and b, WI and w2 the frequencies of incoming and outgoing photons, and the damping factor.

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Spectroscopy of Semiconductor Microstructures by Klaus Ploog (auth.), Gerhard Fasol, Annalisa Fasolino, Paolo Lugli (eds.)

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