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By Klaus Ploog (auth.), Gerhard Fasol, Annalisa Fasolino, Paolo Lugli (eds.)
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Additional info for Spectroscopy of Semiconductor Microstructures
Figure 18 (a) shows the overall view of the short-gated MESFET fabricated from the ODDS. The inset shows the enlarged view of the gate electrode. We show the room-temperature character ist ics of the dev ice in Fig. 18 Cb). The observed transconductance is about 270 mS/mm. The intrinsic transconductance is 400mS/mm. On the other hand, the theoretical gm is given by72,74,75) 39 Fig. 18. Overall view of the DDDS MESFET. The inset scale is 500A/div. (b) Characteristics of the ODDS MESFET. The Gate voltage is in 200 mV step.
14. Temperature dependence of the energy gap of (AlAs) 2
The first order Raman scattering process is described by a Feynman diagram having three vertices. namely. an incoming photon-exciton vertex, the exciton-LO phonon vertex, and the exciton-outgoing photon vertex. The cross sect ion of this scattering process. i. 38)
Spectroscopy of Semiconductor Microstructures by Klaus Ploog (auth.), Gerhard Fasol, Annalisa Fasolino, Paolo Lugli (eds.)