Rare Earth Oxide Thin Films by Marco Fanciulli, Giovanna Scarel PDF
By Marco Fanciulli, Giovanna Scarel
Skinny infrequent earth (RE) oxide motion pictures are rising fabrics for microelectronic, nanoelectronic, and spintronic purposes. The cutting-edge of skinny movie deposition ideas in addition to the structural, actual, chemical, and electric houses of skinny RE oxide motion pictures and in their interface with semiconducting substrates are mentioned. the purpose is to spot right methodologies for the improvement of RE oxides skinny motion pictures and to guage their effectiveness as leading edge fabrics in numerous functions.
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Additional resources for Rare Earth Oxide Thin Films
Aluminum oxide was incorporated into the La2 O3 in order to improve the dielectric properties of the material. The ﬁlm stoichiometry was not reported. Also amorphous La2 O3 (SiO2 )x  has been deposited by ALD using La[N(SiMe3 )2 ]3 as La precursor. However, instead of water, tris(tert -butoxy)silanol (t -BuO)3 SiOH was used as combined silicon and oxygen source. Few details of the deposition conditions or the ﬁlm characteristics were given. Lim et al. have deposited La2 O3 –Al2 O3 nanolaminates by ALD using La(i PrNC(CH3 )Ni Pr)3 , Al(CH3 )3 and water as precursors .
Sol. A 201, 1443 (2004) 17  H. M¨ ols¨ a, L. Niinist¨ o, M. Utriainen: Growth of yttrium oxide thin ﬁlms from β-diketonate precursor, Adv. Mater. Opt. Electron. 4, 389 (1994) 18, 19  H. M¨ ols¨ a, L. Niinist¨ o: Deposition of cerium dioxide thin ﬁlms on silicon substrates by atomic layer epitaxy, Mater. Res. Soc. Symp. Proc. 355, 341 (1994) 18, 19  J. P¨ aiv¨ asaari, M. Putkonen, L. Niinist¨ o: A comparative study on the properties of lanthanide oxide thin ﬁlms processed by atomic layer deposition, Thin Solid Films 472, 275 (2005) 18, 19, 20, 22  M.
ALD produces REO thin ﬁlms and structures based thereon which have good electrical characteristics and interfaces. It is also feasible to process RE-containing multi-component oxides by ALD. , for LaAlO3 and YScO3 , by combining the binary oxide ALD processes. Acknowledgements Financial support from the Academy of Finland (Projects 204742 and 205777) is gratefully acknowledged. The authors also wish to thank the Wihuri Foundation and Finnish Foundation for Technology for their valuable support.
Rare Earth Oxide Thin Films by Marco Fanciulli, Giovanna Scarel