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74, 3551 (1993). -O. J. Wesstr¨om, K. Hieke, B. St˚ alnacke, T. Palm, and B. 47 As/InP with in-plane gates, ”Quantum Confinement IV: Nanoscale Materials, Devices, and Systems” (Eds. M. Cahay et. , Pennington, 1997) vol. 97-11. -O. J. Wesstr¨om, Self-gating in the electron Y-branch switch, Phys. Rev. , 82, 2564 (1999).  Attempts to verify the self-gating effect have been made both in our group and by L. Worschech et. al. at W¨ urzburg University, see also discussions in: S. Reitzenstein, L.
Electronic and photonic quantum devices by Erik Forsberg.