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R. Kingslake's Applied optics and optical engineering. Vol. I: Light. Its PDF

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By R. Kingslake

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Additional info for Applied optics and optical engineering. Vol. I: Light. Its generation and modification

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L ) 3 / 2 - Wso) 3/2 ] + * [ ( M . 18) with φ¥η = 0F(drain) = φ¥ + KBS + VDS. 32) The gate bias, VG, is given relative to the substrate. That is, VG = VGS + VBS. 33) d. 30), the simplest procedure ' As pointed out in Ref. 28). dx 26 JOHN R. BREWS is to choose KBS and φ5θ. s() - 2βφ¥ - ßVBS]}1/2. 31) for βφ¥η. 32) by choosing 0 s L . A current vs. drain bias curve is constructed by choosing a range of values of 0 s L . , the discussion of Fig. 7). Instead, one may need current vs. drain bias curves for a given gate bias, VG.

25) and by the dashed line in Fig. 8, at small enough VG the given VOS will exceed FDsat, and the device will go into saturation, leaving the linear / vs. VG regime. Finally, in Fig. 10 the behavior at very low gate biases, near or below KT, 10"6 1er7 Kr 8 10" 9 V) io- 11 10"12 10-13 10" 14 30 40 50 60 Fig. 10. Log current vs. gate bias in subthreshold region {VG < KT). fox = 1000À, iVA = 1015 cm , VFB = 0. 30) (solid). VDS » kT/q. 30 JOHN R. BREWS is explored. In this region the channel is turning off, and an exponential drop of current with gate bias is found.

65) In Fig. 14 gd is plotted vs. VDS and compared with the approximate expression gd « μq{W|L)Nλ0{\ - KDS/KDsat). 30) we find 9m = ^(W/L)C0MsL - 0 sO ). 68) This quantity is plotted in Fig. 15. 68) that gm is basically Fig. 7 turned on its side. The dashed line approximation to gm in Fig. 15 is just the two linear segment approximation to Fig. 7 used to find ^Dsat earlier. 44)]. 39 PHYSICS OF THE MOS TRANSISTOR 0VDS Fig. 15. The transconductance vs. drain bias for the device of Fig. 11. 68), dashed lines, straight-line approximation.

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Applied optics and optical engineering. Vol. I: Light. Its generation and modification by R. Kingslake


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